| 摘要 |
A semiconductor device with a transistor having a first impurity region, a second impurity region, and a gate electrode formed on a semiconductor substrate. The semiconductor device also includes a first insulating film covering the transistor, and a capacitor formed on the first insulating film. The capacitor includes a dielectric film formed of either ferroelectric material or high dielectric material, and an upper electrode and a lower electrode positioned to put the dielectric film therebetween. A second insulating film is formed on the capacitor, and a wiring layer is formed on the second insulating film. A nitride film covers the wiring layer and a first silicon oxide film formed on the nitride film includes nitrogen at least at the surface thereof.
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