发明名称 Structure and method for hiding DRAM cycle time behind a burst access
摘要 A method and system for hiding DRAM cycle time behind burst read and write accesses. A combined read and write data transfer area interacts with a set of sense amplifiers to accelerate read and write cycles. By independently isolating the read data transfer areas and the write data transfer areas, data can be transferred (1) from the DRAM array to the read data transfer areas, (2) from the write data transfer areas to the DRAM array, and (3) from the write data transfer areas to the read data transfer areas.
申请公布号 US6501698(B1) 申请公布日期 2002.12.31
申请号 US20000703765 申请日期 2000.11.01
申请人 ENHANCED MEMORY SYSTEMS, INC. 发明人 MOBLEY KENNETH J.
分类号 G11C7/10;G11C11/4096;(IPC1-7):G11C7/00 主分类号 G11C7/10
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