| 摘要 |
There is provided a compound semiconductor device having a MESFET whic comprises a channel layer made of InxGa1-xPySb1-y (where 0.3<x<0.7, 0.9<y<0.999999) formed by doping an impurity onto a substrate, a barrier layer formed on the channel layer, a gate layer formed on the barrier layer, and a source electrode and a drain electrode formed separately on both sides of the gate electrode on the barrier layer. Accordingly, the mutual conductance of the compound semiconductor device having the MESFET can be increased rather than the prior art.
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