发明名称 |
Transistors having independently adjustable parameters |
摘要 |
The process rules for manufacturing semiconductor devices such as MOSFET's are modified to provide dual work-function doping following the customary gate sidewall oxidation step, greatly reducing thermal budget and boron penetration concerns. The concern of thermal budget is further significantly reduced by a device structure which allows a reduced gap aspect ratio while maintaining low sheet resistance values. A reduced gap aspect ratio also relaxes the need for highly reflowable dielectric materials and also facilitates the use of angled source-drain (S-D) and halo implants. Also provided is a novel structure and process for producing a MOSFET channel, lateral doping profile which suppresses short channel effects while providing low S-D junction capacitance and leakage, as well as immunity to hot-carrier effects. This also affords the potential for reduction in the contact stud-to-gate conductor capacitance, because borderless contacts can be formed with an oxide gate sidewall spacer. As a result, the S-D junctions can be doped independently of the gate conductor doping, more easily allowing a variety of MOSFET structures.
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申请公布号 |
US6501131(B1) |
申请公布日期 |
2002.12.31 |
申请号 |
US19990359291 |
申请日期 |
1999.07.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES AG |
发明人 |
DIVAKARUNI RAMA;GAMBINO JEFFREY P.;MANDELMAN JACK A.;RENGARAJAN RAJESH |
分类号 |
H01L21/28;H01L21/265;H01L21/336;H01L21/60;H01L21/768;H01L21/8238;H01L21/8242;H01L27/108;H01L29/423;H01L29/43;H01L29/49;H01L29/772;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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