发明名称 |
Method for improving the adhesion and durability of CVD tantalum and tantalum nitride modulated films by plasma treatment |
摘要 |
A method for forming modulated tantalum/tantalum nitride diffusion barrier stacks on semiconductor device substrates used in interconnect structures. Alternating layers of tantalum and tantalum nitride are deposited onto the semiconductor device substrate by chemical vapor deposition from a tantalum pentafluoride precursor vapor, with intermittent ammonia plasma treatment of the tantalum and tantalum nitride such that each tantalum layer and each tantalum nitride layer are treated at least once to thereby reduce the evolution of HF gas, thereby improving the adhesion and durability of the film stacks during subsequent elevated temperature processing.
|
申请公布号 |
US6500761(B1) |
申请公布日期 |
2002.12.31 |
申请号 |
US20010000548 |
申请日期 |
2001.10.24 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
WAJDA CORY;HILLMAN JOSEPH T. |
分类号 |
C23C16/08;C23C16/34;C23C16/44;C23C16/455;H01L21/28;H01L21/285;H01L21/768;H01L23/532;(IPC1-7):H01L21/44;H01L21/823 |
主分类号 |
C23C16/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|