POWER SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a power semiconductor device capable of reducing loss in ordinary operation and performing overcurrent protection with high precision. CONSTITUTION: A power module includes a switch device 11 (IGBT) for power having two main electrodes and a control electrode, an emitter electrode 17 connected to the emitter of the switch device 11 (IGBT), and a control circuit 15 for detecting main current passing through between the main electrodes of the switch device for power and controlling the operation of the switch device 11 for power so as to restrict the main current when it is judged that the detected main current is an overcurrent. The control circuit 15 detects the main current passing through the power switch device 11 with the emitter electrode 17.