发明名称 Data output circuit for semiconductor device with level shifter and method for outputting data using the same
摘要 A data output circuit for a semiconductor device with a level shifter and a method for outputting data using the same. The data output circuit comprises an output buffer for receiving and latching an input data signal with a first voltage range in response to a clock control signal to provide a pair of output data signals, a high-impedance controller/level shifter circuit for outputting high-impedance drive data for the control of a high-impedance state through a pair of output lines according to a first logic state of a high-impedance control signal and for receiving the output data signal pair from the output buffer according to a second logic state of the high-impedance control signal and transferring pull-up and pull-down output data signals with a second voltage range through the output lines, and an output driver for maintaining a data output terminal at the high impedance state in response to the high-impedance drive data from the high-impedance controller/level shifter circuit and for performing an output driving operation in response to the pull-up and pull-down output data signals from the high-impedance controller/level shifter circuit to output final data externally through the data output terminal. A data output speed and a high-impedance transition speed are improved and an excellent driving capability is obtained.
申请公布号 US6501306(B1) 申请公布日期 2002.12.31
申请号 US20000676047 申请日期 2000.09.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM SOO-HWAN;SUH YOUNG-HO
分类号 H03K19/0175;G11C7/10;H03K19/00;H03K19/0185;H03K19/094;(IPC1-7):H03B1/00;H03K3/00 主分类号 H03K19/0175
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