发明名称 |
Self-aligned contact with improved isolation and method for forming |
摘要 |
A method for forming a self-aligned contact in a IC device is disclosed. In the method, a gate oxide layer, a polysilicon layer and a metal silicide layer are first deposited and patterned on a substrate. A first silicon dioxide layer is then deposited on the polysilicon layer followed by the deposition of a silicon nitride cap layer on the first silicon dioxide layer. A second silicon oxide layer is deposited on the silicon nitride cap layer and the stack is patterned forming an oxide-nitride-oxide hard mask. The substrate is then wet etched by an etchant that has low selectivity toward silicon oxide and high selectivity to nitride and silicide, thus forming a toroidal-shaped recess between the silicon nitride layer. A second silicon nitride layer is deposited over the whole substrate. A dielectric layer is formed over the whole substrate.
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申请公布号 |
US6501141(B1) |
申请公布日期 |
2002.12.31 |
申请号 |
US20010928839 |
申请日期 |
2001.08.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD |
发明人 |
LEU JEN-SHIANG |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L29/76;H01L23/48 |
主分类号 |
H01L21/60 |
代理机构 |
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地址 |
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