| 摘要 |
In case of epitaxially growing a single crystal silicon layer by catalytic CVD on a material layer in lattice alignment with single crystal silicon, i.e. a substrate of single crystal silicon, sapphire, spinel, or the like, the total pressure of the growth atmosphere is maintained in the range from 1.33x10-3 Pa to 4 Pa at least in the initial period of the epitaxial growth, or alternatively, partial pressure of oxygen and moisture in the growth atmosphere is maintained in the range from 6.65x10-10 to 2x10-6 Pa at least in the initial period of the epitaxial growth. Thus, the maximum oxygen concentration of the epitaxially grown single crystal silicon layer becomes not higher than 3x1018 atoms/cm-3 at least in a portion with the thickness of 10 nm from the boundary with the substrate 4. It is thus ensured to epitaxially grow a high-quality single crystal silicon layer at a lower temperature than that of existing CVD.
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