发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE: To provide a semiconductor memory in which increment of circuit area is suppressed, and operation of which CAS latency is 1 and operation of which CAS latency is 2 or more are compatible. CONSTITUTION: A repeater circuit 30 outputs either first or second clock signals in accordance with whether CAS latency is 1 or 2 or more based on a clock signal transmitted from an internal clock generating circuit 16 by a clock signal line. The first clock signal has two times activation pulse in a cycle of an external clock. An input output circuit 200.2 responds to activation of the second clock signal in a state in which CAS latency is 2 or more, responds to activation of the first clock signal and an equalizing signal in a state in which CAS latency is 1, and stores read data.
申请公布号 KR20020096867(A) 申请公布日期 2002.12.31
申请号 KR20020020869 申请日期 2002.04.17
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MATSUMOTO JUNKO;OKAMOTO TAKEO;YAMAUCHI TADAAKI
分类号 G11C11/407;G11C7/00;G11C7/10;G11C11/401;(IPC1-7):G11C7/00 主分类号 G11C11/407
代理机构 代理人
主权项
地址