| 摘要 |
A process for depositing titanium silicide films via chemical vapor deposition takes place in a deposition chamber that has been evacuated to less than atmospheric pressure and utilizes, as reactants, the organometallic compound tertiary-butyltris-dimethylamido-titanium and a silicon-containing compound such as silane. The deposition temperature, which is dependent on the nitrogen source, is within a range of 400 to 800° C. The low end of the temperature range utilizes a plasma-enhanced deposition process, while the higher end of the temperature range relies on thermal decomposition to initiate the reaction. The films deposited using the process have a sheet resistance of about 2 to 10 ohms per square and contain less than 5 percent carbon impurities and less than 5 percent oxygen impurities by weight. Titanium silicide films incorporating various other compounds may be deposited using either of the heretofore described embodiments of the process by adding other precursors to the TBTDMAT and the silicon-containing compounds. For example, by adding nitrogen-containing compounds such as amines, ammonia, hydrazines to the silicon and titanium precursors and using the same reaction parameters, a film having the general composition TiSiXN(1-X) can be deposited. Additionally, by adding tungsten-containing organometallic compounds such as bis(2,4-dimethylpentadienyl)tungsten or tungsten halide compounds such as WF6 or WCI6 to the silicon and titanium precursors, a titanium silicide film having the general formula TiSiW can be deposited.
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