| 摘要 |
PURPOSE: A method for fabricating a semiconductor laser device is provided to remove a complicated chip bar handling process by performing directly a process at a state of wafer without a chip bar cleaving process. CONSTITUTION: An n-GaAs wafer(10), an n-clad layer(20), a quantum well(40), and an InGap layer(50) are sequentially grown by using a MOCVD(Metal-Organic Chemical Vapor Deposition) method. An SiN mask is deposited thereon by using a PECVD(Plasma Enhanced Chemical Vapor Deposition) method. The SiN mask is etched to expose the InGaP layer(50). Nitrogen ions are implanted into a ridge in order to form a mirror side(30). The SiN mask is removed. The nitrogen ions are diffused by performing a thermal process. The mirror side is formed by removing a damage due to the ion implant process. A p-clad layer(70) is grown on the InGap layer(50). A ridge is formed on the p-clad layer(70). A CBL(Current Blocking Layer) region(80) is grown on the ridge. A plurality of electrode layers(100,110) are formed by depositing a GaAs capping layer on a whole surface of the above structure.
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