| 发明名称 |
Semiconductor device comprising a bottom gate type thin film transistor |
| 摘要 |
A semiconductor device includes a bottom gate type thin film transistor, wherein the bottom gate type thin film transistor is characterized in that a gate electrode is composed of a first layer comprising titanium and a second layer comprising aluminum formed on the first layer.
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| 申请公布号 |
US6501094(B1) |
申请公布日期 |
2002.12.31 |
| 申请号 |
US19980095026 |
申请日期 |
1998.06.09 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;(IPC1-7):H01L29/04;H01L31/036;H01L31/112;H01L27/01;H01L29/76 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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