| 摘要 |
An object of the present invention is to provide a fabrication method of a liquid crystal display which can reduce the number of masks used in a photolithography process. According to this structure, a gate bus line and a storage capacitor wiring are formed using a first mask, and first metal films are formed on the whole surface including a sidewall insulating film. Then, etching is performed using a second mask until an active semiconductor layer in a TFT forming area on the gate bus line and in an element separation area between pixels exposes. Along with an electroplating of a metal film on the first metal films on a drain electrode, a third metal film thinner than the second metal film is formed on an active semiconductor between the drain electrode and a source electrode and to a pixel electrode except the element separation area between pixels. Finally, using a third metal film as a mask, the third metal film is removed after removing the active semiconductor layer on the element separation area between pixels.
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