Accessing of two-terminal electronic quantum dot comprising static memory

摘要

A method of storing and accessing data utiliaing two-terminal static memory cells made from semiconductor quantum dots. Each quantum dot is approximately 10 nm in dimension so as to comprise approximately 1000-10,000 atoms, and each memory cell has in a volume of approximately 6.4x107 cubic Angstroms, thereby corresponding to about 300,000 atoms. In use one of at least two possible stable states is set in the static memory cell by application of a D.C. voltage across the two terminals. The stable state is then monitored by application of A.C. voltage across the two terminals while monitoring the resulting A.C. current flow.