| 摘要 |
A semiconductor memory cell comprising a first transistor for readout, a second transistor for switching, and having a first region, a second region formed in a surface region of the first region, a third region formed in a surface region of the second region, a fourth region formed in a surface region of the first region and spaced from the second region, a fifth region formed in a surface region of the fourth region, and a gate region, wherein when the semiconductor memory cell is cut with a first imaginary perpendicular plane which is perpendicular to the extending direction of the gate region and passes through the center of the gate region, the second region and the fourth region in the vicinity of the gate region are nearly symmetrical with respect to a second imaginary perpendicular plane which is in parallel with the extending direction of the gate region and passes through the center of the gate region.
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