| 摘要 |
A structure of a new active pixel sensor cell formed in a semiconductor substrate is disclosed. An n-type region is formed in the substrate extending to the surface. Two p+ regions are formed in the n-type region, both extending to the surface and covering almost all the active area of the new active pixel sensor cell. The p+ region forming the p+ node of the photodiode has a substantially larger surface area than the p+ region forming the p+ node of the output diode. Isolation regions are formed over those portions of the new active pixel cell periphery that will not be adjacent to other new active pixel sensor cells. A polysilicon floating gate is disposed over a dielectric layer formed over the surface. The floating gate overlaps portions of both p+ regions and the floating gate is connected to photodiode p+ region by a conducting region passing through the dielectric layer. A control gate is disposed over the photodiode p+ region and over the floating gate and is separated from the photodiode p+ region and the floating gate by dielectric layers. A metal layer, disposed over a dielectric layer, is connected to the output diode p+ region by a conductive region passing through the dielectric layers.
|
