FORMATION OF SILICON ON INSULATOR(SOI) DEVICES AS ADD-ON MODULES FOR SYSTEM ON CHIP PROCESSING

摘要

PURPOSE: A method and structure for providing modular SOI islands on a chip are provided which are large enough to accommodate semiconductor devices formed thereon while also maintaining portions of the same chip for conventional CMOS processing and device formation. CONSTITUTION: A method for forming a silicon on insulator(SOI) island over a semiconductor substrate comprises the steps of providing a silicon substrate(3), forming an insulating layer(7) over the semiconductor substrate, forming at least one opening through the insulating layer thereby exposing at least one corresponding substrate contact area of the substrate, forming an amorphous silicon layer over the insulating layer including within the at least one opening and contacting the at least one corresponding substrate contact area, and converting the amorphous silicon layer to a substantially single crystalline silicon layer using laser annealing.