SEMICONDUCTOR MEMORY DEVICE HAVING DUMMY PATTERN FOR PREVENTING LOADING EFFECT

摘要

PURPOSE: A semiconductor memory device having a dummy pattern for preventing a loading effect is provided to improve an integrated degree of the semiconductor device by omitting generation of a dummy cell. CONSTITUTION: A high pattern density region and a low pattern density region of a silicon substrate are simultaneously etched in an isolation process. An etching profile of the low pattern density region has a bigger slope by a loading effect action since an etching speed difference is generated between the high pattern density region and the low pattern density region when the high pattern density region and the low pattern density region are simultaneously etched in the isolation process. Accordingly, a bar type dummy pattern(10) is formed on the outside of a dummy cell(A) for preventing the loading effect.