Binary and attenuating phase-shifting masks for multiple wavelengths

摘要

The disclosure describes an exemplary method of using a dual layer feature on a mask in an integrated circuit fabrication process to provide for use of the mask at multiple wavelengths. This method can include providing a dual layer feature over a mask, where the dual layer feature is configured with layers of selected thicknesses which allow the mask to be used at multiple wavelengths; and subjecting the dual layer feature and the mask to a beam at one of the multiple wavelengths.