发明名称 Methods for calculating cumulative dose of exposure energy from regions of a microlithography reticle for use in correcting proximity effects
摘要 Methods are disclosed for calculating cumulative exposure energy from a microlithography reticle, especially a reticle used for charged-particle-beam (CPB) microlithography. The methods provide an accuracy of results at least as high as conventional methods, but the subject methods can be performed using substantially less calculation time, even for complex patterns. The pattern features contained within a region and/or one or more size parameters of the region are evaluated according to specified rules. The region also is subdivided according to the specified rules. Subdivision produces subregions that also are evaluated according to the rules to determine whether to subdivide further or to cease further subdivision. The result is a branching structure for the region, containing multiple levels of subregions arranged in an hierarchical manner. As a result, e.g., a subregion distant from a cumulative-energy evaluation point (and that has little effect on the distribution position of elements therein) can be left relatively large, whereas a subregion near the evaluation point has a relatively large effect on the distribution position of the elements therein and hence is relatively small. From the branching structure, cumulative energy is calculated from the constituent subregions.
申请公布号 US6501083(B1) 申请公布日期 2002.12.31
申请号 US20000704473 申请日期 2000.11.01
申请人 NIKON CORPORATION 发明人 KAMIJO KOICHI
分类号 H01L21/027;G03F1/14;G03F1/16;G03F1/20;G03F7/20;H01J37/302;(IPC1-7):G21K5/10;H01J37/08;G06F17/50;G03C5/00;G03C1/725 主分类号 H01L21/027
代理机构 代理人
主权项
地址