METHOD AND APPARATUS FOR FABRICATING ELECTROPLATING LAYER

摘要

PURPOSE: A method for fabricating an electroplating layer is provided to be applicable to fabrication of a semiconductor device and to minimize a thickness difference of the electroplating layer formed in the center of a substrate, by easily forming the electroplating layer without a defect like a void. CONSTITUTION: An insulation layer having an opening is formed on the substrate(230). A barrier layer is continuously formed on the opening and the insulation layer. A seed layer is formed on the barrier layer. A material having resistivity of 1.60 x10E-8 to 1.75x10E-8 ohm meter is electroplated on the seed layer to form a plate layer when current of 2-6 ampere flows.