发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A nonvolatile semiconductor memory device includes memory cell, charge buildup damage reducer and damage reducer controller. The memory cell includes floating and control gates formed over a semiconductor substrate. The damage reducer is connected to the control gate. The controller is connected to the damage reducer. The damage reducer controls a potential level at the control gate so that the potential level falls within a predetermined voltage range even if charge buildup occurs in the control gate during a metallization process. And the controller allows no current to flow through the damage reducer while the memory cell is being written, read or erased.
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申请公布号 |
US6501683(B2) |
申请公布日期 |
2002.12.31 |
申请号 |
US20010855772 |
申请日期 |
2001.05.16 |
申请人 |
MATSUSHITA ELECTRIC CO., LTD. |
发明人 |
TAKAHASHI KEITA |
分类号 |
G11C16/30;H01L27/115;(IPC1-7):H01L27/04 |
主分类号 |
G11C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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