发明名称 |
Semiconductor integrated circuit device |
摘要 |
A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions. |
申请公布号 |
US6501689(B2) |
申请公布日期 |
2002.12.31 |
申请号 |
US20010983717 |
申请日期 |
2001.10.25 |
申请人 |
HITACHI, LTD.;HITACHI VLSI ENGINEERING CORP. |
发明人 |
KURODA KENICHI;TAKEDA TOSHIFUMI;MORIUCHI HISAHIRO;SHIRAI MASAKI;SAKAGUCHI JIROH;MATSUO AKINORI;YOSHIDA SHOJI |
分类号 |
H01L21/8247;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C7/00 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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