发明名称 Overdriven pass transistors
摘要 Programmable logic structures include logic blocks that operate at very low supply voltages. According to the invention, a pass transistor is positioned between logic blocks. Since the logic blocks of the invention operate at very low supply voltages, the pass transistor can be overdriven on, thereby reducing the added resistance. In one embodiment of the invention, the pass transistor is a low threshold transistor. In this embodiment, the pass transistor is also overdriven off to reduce leakage current and further isolate the logic blocks.
申请公布号 US6501295(B1) 申请公布日期 2002.12.31
申请号 US20010872840 申请日期 2001.06.01
申请人 SUN MICROSYSTEMS, INC. 发明人 BURR JAMES B.
分类号 H03K19/177;(IPC1-7):H01L25/00 主分类号 H03K19/177
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