| 摘要 |
PURPOSE: To efficiently form a thin film having little impurity content on a substrate. CONSTITUTION: A heater 32 is provided in a reaction chamber 31, a substrate- rotating unit 33 is provided outside the reaction chamber 31, a susceptor 34 rotated by the substrate-rotating unit 33 is provided in the reaction chamber 31, the substrate 35 is placed on the susceptor 34, a shower plate 36 with shower holes 37 is provided above the susceptor 34, a reaction gas supply unit 38 is provided outside the reaction chamber 31, the reaction gas supply unit 38 and the shower plate 36 are connected by a gas supply pipe 39, a valve 40 is provided in the gas supply pipe 39, a RPO unit 41 is provided outside the reaction chamber 31, the RPO unit 41 and the shower plate 36 are connected by a gas supply pipe 42, a valve 43 is provided in the gas supply pipe 42, an exhaust pipe 44 is provided for the reaction chamber 31, and a control device 45 is provided to control, in such a manner that film-forming step and film-removing step are successively repeated a plurality of times.
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