| 摘要 |
PURPOSE: A method for fabricating a flash memory device is provided to form a floating gate by performing an oxide layer trench etch process of single step, and to guarantee an effective channel length margin of the flash memory device by forming a larger floating gate than a conventional floating gate. CONSTITUTION: A semiconductor substrate(21) is prepared. A gate oxide layer(23) is formed on the semiconductor substrate. An oxide layer is formed on the gate oxide layer. A predetermined portion of the oxide layer is selectively patterned to form a trench(26) in the oxide layer. A floating gate is formed inside the trench. An ONO layer(33) is formed on the selectively patterned oxide layer including the floating gate. A control gate is formed on the ONO layer corresponding to the floating gate.
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