| 摘要 |
<p>A silicon single crystal wafer having a diameter of above 300 mm is characterized in that a denuded zone free of COP over a depth of 3 µm or more from the surface is present. A silicon single crystal production method is also disclosed in which a silicon single crystal is grown by pulling a silicon single crystal having a diameter of 300 mm or more at a speed V [mm/min] by the CZ method while doping it with nitrogen in such a way that the ratio V/G [mm2/K · min] is below 0.17 where G [K/mm] is the average of the temperature gradient between the melting point of silicon and 1400 ° C in the crystal along the axis of the pulling. Thus, the silicon single crystal pulling condition and the wafer heat-treatment condition of producing a silicon single crystal wafer having a denuded zone free of COP at a sufficient depth in the surface by pulling a silicon single crystal of a diameter of 300 mm or more, machining the crystal into a wafer, and heat-treating the wafer are established.</p> |
