ELECTRON BEAM EXPOSURE SYSTEM

摘要

An electron beam exposure system for exposing a pattern onto a wafer with an electron beam, comprising an electron beam generating section, and an electron beam shaping member having a plurality of apertures for shaping the electron beam, wherein a first ratio between the width of a first aperture out of the plurality of apertures in one direction substantially perpendicular to the irradiating direction of electron beam and the width of a pattern in a direction corresponding to the first direction of a pattern being exposed onto a wafer with an electron beam shaped by the first aperture is different from a second ratio between the width of second aperture out of the plurality of apertures in one direction and the width of a pattern in a direction corresponding to the first direction of a pattern being exposed onto a wafer with an electron beam shaped by the second aperture.