| 摘要 |
<p>A nitride semiconductor light emitting element being enhanced in light picking-up efficiency and capable of a high-output light emission, comprising, formed on a substrate, a first conductive-type layer (11), an active layer (3), and a second conductive-type layer (12), wherein a third nitride semiconductor layer (5) of InAlGaN functioning as a current constricting layer having an opening (41) is provided between a first nitride semiconductor layer (4) and a second nitride semiconductor layer (6) on the layer (4) within the second conductive layer (12), and an electrode (20) and a window (40) or a translucent film (30) provided in the window (40) are partly provided on the surface of the second conductive-type layer, thereby enabling a large quantity of light to be picked up from the upper surface.</p> |
