SILICON DEVICE

摘要

A silicon device comprising:an insulating substrate;a beam−shaped structure of silicon jointed through a cavity to the insulating substrate;and a frame of silicon jointed to the insulating substrate while surrounding the beam−shaped structure at a spacing.The beam−shaped structure includes at least one functional portion composed of:a support portion jointed to the insulating substrate;and at least one cantilever formed integrally with the support portion and extending into the cavity.On the surface of the insulating substrate at least directly below the cantilever,there is formed a conductive film which is conductive with the frame.The conductive film prevents the surface of the insulating substrate from being positively charged at a dry etching time.As a result,a positively charged etching gas is not recoiled from the surface of the insulating substrate by the electric repulsion so that it does not corrode the beam−shaped structure.With this beam−shaped structure having highly accurate shape and size,therefore,the silicon device can provide a high reliability and a high degree of freedom of design.