| 摘要 |
<p>A nitride semiconductor device having an improved light extracting efficiency and a high light output. On a substrate, there is formed a multilayer structure of a first-conductivity-type layer (11), an active layer (3) and a second conductivity-type layer (12). In this second-conductivity-type layer (12) between a first nitride semiconductor layer (4) and an overlying second nitride semiconductor layer (6), there is sandwiched a third nitride semiconductor layer (5) of InAlGaN, which acts as a current constricting layer having an aperture (41). On the surface of the second-conductivity-type layer, there are partially formed an electrode (20) and a window (40) or a transparent film (30) provided in the window (40). As a result, much light can be extracted from the top face of the structure.</p> |
