ELECTRON BEAM EXPOSURE APPARATUS,ELECTRON BEAM EXPOSING METHOD,SEMICONDUCTOR MANUFACTURING METHOD,AND ELECTRON BEAM SHAPE MEASURING METHOD

摘要

An electron beam exposure apparatus for exposing a wafer to an electron beam comprising a electron beam generation unit for generating an electron beam, an electron beam shaping member having apertures for shaping the electron beam, a predetermined deflection unit for deflecting the electron beam passing through the electron beam shaping member, and a deflection correction control unit for controlling the predetermined deflection unit based on the position of the apertures through which the electron beam passes in the electron beam shaping means to correct distortion of the image formed by the electron beam on the wafer.