| 摘要 |
<p>A process is disclosed for incorporating a back surface field into a silicon solar cell, which comprises the steps of: a) depositing a layer of aluminium on the rear surface of the cell; b) sintering the aluminium layer at a temperature of between 700 and 1000°C; c) exposing the cell to an atmosphere of a compound of a Group V element and diffusing at a temperature of between 950 and 1000°C, so as to dope exposed p-type silicon surfaces with said Group V element, preferably phosphorus.</p> |
