MULTI−BEAM SEMICONDUCTOR LASER ELEMENT

摘要

A multi−beam semiconductor laser element (40) which provides a uniform light output from each beam, for ease of positioning, and which is a GaN multi−beam semiconductor laser element having four laser stripes (42A, 42B, 42C, 42D) emitting laser beams of the same wavelength. Each laser stripe (42A−42D) has a p−side common electrode (48) on a mesa (46) formed on a sapphire substrate (44), and respective laser stripes have respective active regions (50A, 50B. 50C, 50D). Two n−side electrodes (52A, 52B) are provided on an n−type GaN contact layer (54) on the opposite sides of the mesa (46) as common electrode facing the p−side common electrode (48). The distance A between the laser stripe (42A) and the laser stripe (42D) is up to 100 μm. The distance B1 between the laser stripe (42A) and the laser−side end of the n−side electrode (52B) is up to 150 μm, and the distance B2 between the laser stripe (42D) and the laser−side end of the n−side electrode (52A) is up to 150 μm.