| 摘要 |
<p>A permanently-ON MOS transistor (21) comprises silicon source and drain regions (9) of a first conductivity type in a silicon well region (3) of a second conductivity type. A silicon contact region (15) of the first conductivity types is buried in the well region, said contact region contacting said source region and said drain region. A first gate insulating layer (2) is selectively placed over the silicon source and drain regions. A second gate insulating layer (7) is selectively placed over the first gate insulating layer and over the silicon contact region. A polysilicon gate region (8', 8') is placed over the second gate insulating layer.</p> |
