P−TYPE SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

A p−GaN layer (5) of group−III nitride compound semiconductor is formed on a sapphire substrate (1) by an MOVPE method. A first metallic layer (6) of Co/Au is formed on the p−GaN layer (5). Thereafter, an electron beam is applied through the first metallic layer (6) by a planar electron applying apparatus using a plasma. Thus, no damaged layer is prevented from being formed in the surface layer, and the resistivity of the p−GaN layer (5) lowers. A second metallic layer (10) (Ni) is formed on the first metallic layer (6) and then etched through the second metallic layer (10) by using hydrofluoric−nitric acid. As a result, the first metallic layer is almost completely removed. A translucent p−electrode (7) of Co/Au is formed thereon. Consequently, a p−type semiconductor having a reduced contact resistance and driven by low drive voltage is produced, and the light−transmission efficiency is improved.