发明名称 |
DUO-STEP PLASMA CLEANING OF CHAMBER RESIDUES |
摘要 |
A method involving plasma cleaning of deposit residues in process chamber using duo-step wafer-less auto clean method is detailed. Specifically, the method involves cleaning the processing chamber by flowing a first gaseous composition with at least about 75% of fluorine-containing compound of the formula XyFz, into a processing chamber and then forming a first etcheant plasma which removes silicon and silicon based byproducts from the interior surfaces of the processing chamber. The method then involves flowing a second gaseous composition into the processing chamber with a composition of at least about 50% O2 and forming a plasma from the second gaseous composition to provide a second etchant plasma which removes carbon and carbon based byproducts from the interior surfaces of the processing chamber. A system configured to execute the two step cleaning process is also provided.
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申请公布号 |
WO02090615(A9) |
申请公布日期 |
2002.12.27 |
申请号 |
WO2002US14101 |
申请日期 |
2002.05.03 |
申请人 |
LAM RESEARCH CORPORATION;RICHARDSON, BRETT, C.;WONG, VINCENT |
发明人 |
RICHARDSON, BRETT, C.;WONG, VINCENT |
分类号 |
B08B3/06;B08B7/00;C23C16/44;H01J37/32;(IPC1-7):C23C16/44;H01L21/321 |
主分类号 |
B08B3/06 |
代理机构 |
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