| 摘要 |
An exemplary embodiment of the present invention discloses a method for forming a storage capacitor for a memory device, by the steps of: forming a bottom electrode of the storage capacitor over a BoroPhosphoSilicate Glass (BPSG) layer; forming a storage capacitor dielectric layer over the bottom electrode, the storage capacitor dielectric layer consisting of a nitride layer that is 50 Åor less in thickness; exposing the nitride dielectric layer to heat during a first stage rapid thermal oxidation step at a first temperature range that is equal to or greater than a reflow temperature required to reflow the BPSG layer; exposing the nitride dielectric layer to wet oxidation during a second stage rapid thermal oxidation step, the second stage rapid thermal oxidation step is performed at a second temperature ranging from 810° C. to 1040° C. and for a time duration of less than three minutes and being sufficient to oxidize the nitride dielectric layer to prevent the diffusion of 90% of oxygen atoms through the nitride dielectric layer. The preferred-wet oxidation is a steam ambient including a gas selected from the group consisting of O2/HCl, O2/TLC, NO/HCl, NO/TLC, N2O/TLC or O3.
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