SEMICONDUCTOR LASER DEVICE

摘要

PURPOSE: To provide the semiconductor laser device of high reliability and satisfactory temperature characteristics in the semiconductor laser device, having a window structure area using the random process of a quantum well structure. CONSTITUTION: In the semiconductor laser device, having the window structure area formed by making random the active layer of the quantum well structure through the implantation of silicon ions and following heat treatment; no transition loop practically exists in the window structure region 10a and the neighborhood (upper clad layer 9a). Therefore, deterioration of the semiconductor laser device, caused by the transition loop can be prevented and the reliability of the semiconductor laser device, can be improved.