| 摘要 |
PURPOSE: A method for manufacturing a conductive line in a semiconductor device is provided to prevent short of conductive line and to stabilize the profile of the conductive line by using an oxynitride layer as an anti-reflective layer. CONSTITUTION: An oxynitride layer(5) as an anti-reflective layer is formed on a conductive layer(4) as an etch object layer. At this time, the oxynitride layer(5) is formed by PECVD(Plasma Enhanced CVD) using mixed gases of N2O of 50-500 sccm, N2 of 1000-5000 sccm and SiH4 of 100-500 sccm. Also, the main power of 50-1000W and the low frequency power of 0-1000W as a substrate bias are used in the PECVD. The gas pressure is 1 mTorr - 10 Torr and the substrate temperature is 300-500°C. The oxynitride layer(5) has an optical constant value, wherein real number is 1.6-2.2 and imaginary number is 0-1.0.
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