| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a substrate for an active matrix display device integral with a peripheral circuit, comprising a thin-film transistor which uses a polycrystal silicon thin-film and provides excellent TFT characteristics and display quality, and to provide a liquid-crystal display device comprising it and a manufacturing method therefor. SOLUTION: There are provided a display region in which a plurality of pixel regions formed of a plurality of bus lines are arrayed in matrix, a peripheral circuit formation region arranged around the display region, a thin-film transistor 27 which is formed on a glass substrate 2 and comprises a channel region formed of a (100) preference orientation polycrystal silicon thin-film 9, and a thin-film transistor 26 which is formed on the glass substrate 2 and comprises a channel region formed of a (111) preference orientation polycrystal silicon thin film 8.</p> |
