发明名称 |
Semiconductor device having shared contact and fabrication method thereof |
摘要 |
Semiconductor devices and methods of fabrication. A device includes a semiconductor substrate, a gate electrode insulated from the semiconductor substrate by a gate insulation layer, LDD-type source/drain regions formed at both sides of the gate electrode, an interlayer insulation layer formed over the gate electrode and the substrate, and a shared contact piercing the interlayer insulation layer and contacting the gate electrode and one of the LDD-type source/drain regions including at least a part of a lightly doped drain region. Multiple-layer spacers are formed on both sides of the gate structure and used as a mask in forming the LDD-type regions. At least one layer of the spacer is removed in the contact opening to widen the opening to receive a contact plug.
|
申请公布号 |
US2002195686(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20020112413 |
申请日期 |
2002.03.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DO-HYUNG;HONG JUNG-IN |
分类号 |
H01L21/28;H01L21/768;H01L21/8234;(IPC1-7):H01L29/40 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|