发明名称 |
Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon |
摘要 |
A structure containing a ferroelectric material comprises a substrate comprising silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. A non-c-axis-oriented, anisotropic perovskite ferroelectric layer is formed on the template layer.
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申请公布号 |
US2002197489(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20010875630 |
申请日期 |
2001.06.06 |
申请人 |
LEE HO NYUNG;SENZ STEPHAN;VISINOIU ALINA;PIGNOLET ALAIN;HESSE DIETRICH;GOSELE ULRICH |
发明人 |
LEE HO NYUNG;SENZ STEPHAN;VISINOIU ALINA;PIGNOLET ALAIN;HESSE DIETRICH;GOSELE ULRICH |
分类号 |
B32B9/00;B32B9/04;B32B13/04;B32B15/04;B32B19/00;C30B23/02;C30B25/18;C30B29/32;H01L21/314;H01L21/316;(IPC1-7):B32B9/00 |
主分类号 |
B32B9/00 |
代理机构 |
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主权项 |
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地址 |
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