| 摘要 |
PROBLEM TO BE SOLVED: To provide technology for forming a group-III nitride based thin magnetic semiconductor film. SOLUTION: After an AIN layer 22 is formed on the surface of a substrate 21, a buffer layer 23 is formed of a GaN-based thin film on the surface of the AIN layer; and nitrogen-atom containing gas such as ammonia gas is introduced into the surface of the buffer layer 23 to carry out pyrolysis, and irradiation with molecular rays of a group-III element and molecular rays of a magnetic impurity element is carried out to a thin semiconductor thin film 24. The thin semiconductor thin film 24 shows ferromagnetism at room temperature. Further, GaN and Mn are a p-type at room temperature, so they are usable for a p-type layer of a semiconductor element.
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