发明名称 |
Structure of a CMOS image sensor |
摘要 |
A structure of a CMOS image sensory device is described. A photodiode sensory region and a transistor device region are isolated from each other by an isolation layer formed in the substrate. A gate structure is located on the transistor device region, and a source/drain region is in the transistor device region beside the side of the gate structure. A doped region is in the photodiode sensory region. A self-aligned block is located on the photodiode sensory region and a protective layer is formed on the entire substrate.
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申请公布号 |
US2002196480(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20010892419 |
申请日期 |
2001.06.26 |
申请人 |
CHEN CHONG-YAO;LIN CHEN-BIN;LIU FENG-MING |
发明人 |
CHEN CHONG-YAO;LIN CHEN-BIN;LIU FENG-MING |
分类号 |
H01L27/146;H01L31/062;H01L31/113;H04N1/04;(IPC1-7):H04N1/04 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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