发明名称 |
Metal oxide semiconductor transistor and manufacturing method for the same |
摘要 |
A drift layer is formed on a substrate. A base region is formed on the drift layer. A plurality of source regions are formed in a surficial layer of the base region. A plurality of gate electrodes face to the base region and the source region via a gate insulating film. A source electrode is brought into contact with the base region and the source region. A nitrogen cluster containing layer is embedded in the drift layer so as to extend laterally under the base region so that at least part of the drift region is left under the nitrogen cluster containing layer.
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申请公布号 |
US2002195651(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20020164313 |
申请日期 |
2002.06.07 |
申请人 |
MIURA SHOJI;SUZUKI MIKIMASA;KUROYANAGI AKIRA;NAKANO YOSHITAKA |
发明人 |
MIURA SHOJI;SUZUKI MIKIMASA;KUROYANAGI AKIRA;NAKANO YOSHITAKA |
分类号 |
H01L21/336;H01L29/06;H01L29/32;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L23/58 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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