发明名称 |
Method for making programmable resistance memory element |
摘要 |
A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode in a slot-like opening formed in a dielectric material. A method of making the opening using a silylated photoresist.
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申请公布号 |
US2002197566(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20020072324 |
申请日期 |
2002.02.08 |
申请人 |
MAIMON JON;POMERENE ANDREW |
发明人 |
MAIMON JON;POMERENE ANDREW |
分类号 |
G11C16/02;H01L45/00;(IPC1-7):G03F7/00 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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