发明名称 Light emitting device, semiconductor device, and method of manufacturing the devices
摘要 The invention provides a light emitting device and a semiconductor device each having improved characteristics by preventing occurrence of a damage caused by contact of a tool. On a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked. On the p-type semiconductor layer, a p-side electrode is provided. The p-type semiconductor layer has a projected portion for limiting current in correspondence with a current injection area in the active layer. A projected portion is formed on the surface of the p-side electrode in correspondence with the projected portion for limiting current. On the surface of the p-side electrode, a protective portion is also provided in correspondence with the area other than the current injection area in the active layer. The top face of the protective portion is higher than that of the projected portion. With the configuration, contact of a tool or the like with the projected portion and its periphery can be prevented, so that the projected portion and its periphery such as the projected portion for limiting current and the current injection area in the active layer can be prevented from being damaged.
申请公布号 US2002195608(A1) 申请公布日期 2002.12.26
申请号 US20020225318 申请日期 2002.08.21
申请人 MIYAZAKI KOICHI 发明人 MIYAZAKI KOICHI
分类号 H01L33/30;H01L33/38;H01S5/223;(IPC1-7):H01L21/00;H01L27/15;H01L31/12;H01L33/00 主分类号 H01L33/30
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