METHOD FOR MANUFACTURING CONTACT HOLE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact hole in a semiconductor device is provided to be capable of improving integration degree and increasing processing margin by using a selective-W film. CONSTITUTION: A planarization layer(2) is formed on a semiconductor substrate(1). A conductive layer(3) is formed on the planarization layer. A barrier insulating layer is formed on the conductive layer. The planarization layer(2) is exposed by selectively etching the barrier insulating layer and the conductive layer. A selective-W film(7) is formed at both sidewalls of the conductive layer(3). A contact hole(8) is then formed by etching the planarization layer(2) using the conductive layer and the selective-W film(7) as a mask.